Italian Universitiy Nanoelectronics Team (IUNET)

The National Interuniversity Consortium for Nanoelectronics (IUNET) consists of 11 Italian Universities active in the field of Electronic Technologies and, in particular, physics, modeling, characterization, design and reliability of micro- and nano-electronic components for digital, analog and power applications.

The consortium units involved in the iRel4.0 project are the Politecnico of Milan and the Universities of Bologna and Padova. IUNET has the statutory purpose of promoting research in its various application areas, and acts as a support structure for Associated Universities, coordinating the promotion and implementation of research projects with high innovative content. In conducting European and national projects, IUNET acts as a unified interface of the Italian Universities, involving from time to time those units with demonstrated competence in the project's themes, and taking care of the scientific and administrative reporting of the activities carried out.

The Consortium is a non-profit organization, and does not have its own and autonomous facilities and laboratories. For the implementation of the projects, it uses the structures belonging to the Universities involved, to which it allocates the entire amount of the funding obtained, save a small percentage that the Universities freely devote to support the Consortium.


IUNET offers renowned and complementary expertise in the field of the electrical characterization and TCAD modelling of the semiconductor power device reliability and performance at device and circuit level. In particular,

  • University of Bologna has been focusing on semiconductor power device reliability since 2000, developing different TCAD modeling implemented in commercial TCAD simulators;
  • University of Padova has been studying GaN device reliability since 1999, initially focusing on microwave devices, light-emitting diodes and lasers, and more recently on devices for power switching applications;
  • Politecnico di Milano has a consolidated experience in the fields of risk, reliability resilience, vulnerability and dependability analysis, prognostics and health management, concept drift identification and process monitoring.

Key contribution

  • Electrical characterization and TCAD/empirical modeling of the degradation mechanisms limiting the reliability of low-voltage GaN HEMTs for LIDAR applications;
  • Development a proof-of-concept monolithic LIDAR driver to be designed using IMEC GaN-IC platform;
  • Development of fault detection, condition monitoring and predictive analysis methods using AI, machine learning and concept drift techniques; • Prediction of product quality and diagnose in order to identify possible causes of quality reduction;
  • Design and implementation of methods to assess the product overall quality and reliability.

Italian Universitiy Nanoelectronics Team

Via Toffano 2
40125 Bologna
Phone: +39 051 2095400