The Fraunhofer Institute for Integrated Systems and Device Technology IISB conducts applied research and development in the field of electronic systems for application. In this connection, the institute uniquely covers the entire value chain - from basic materials to whole power electronic systems.
With its two business areas, semiconductors and power electronics, the IISB provides innovation and solutions in various specialized fields:
- materials development
- semiconductor technology and manufacturing
- electron devices
- packaging and modules
- vehicle power electronics
- energy electronics and energy supply systems
These services are supplemented by broad activities in test and reliability, simulation, characterization, and metrology. In addition to silicon technology, the IISB has a strong focus on wide-bandgap semiconductors, especially silicon carbide (SiC). For SiC, the institute offers a complete technology backbone, including materials science, devices, modules, and their integration in highly efficient power electronic systems.
Fraunhofer IISB conduct a semiconductor manufacturing line for electronic devices. Thereon silicon carbide power devices are established, too. With the integrated manufacturing of SiC chips utilizing the same production line as silicon power chips, IISB is able to guarantee reliability and process stability at the same level as its silicon device. Furthermore, SiC is well adapted for application up to 500°C because of its wide band gap.
Especially amplification circuits on SiC are of great importance for sensors working in the temperature range up to 500°C. Even when the SiC circuits work at those high temperatures, nothing is known about its reliability. Fraunhofer IISB analyze the reliability of CMOS SiC circuits up to 500°C with the focus on conduction paths, e.g. metallization lines.
Together with its partner TU Delft, Fraunhofer IISB design the amplification circuits for the wide band gap material SiC. The application is the amplification of a sensor signal and the integration of a sensor system working up to 500°C developed at TU Delft. Additionally appropriate test structures where integrated in the design for reliability measurements at high temperatures.
Afterwards, the circuits will be manufactured on the Fraunhofer IISB SiC line. The circuits will be submitted to long-term reliability tests at elevated temperatures. The results heron will be used for an optimized design and manufacturing in a second run. At last, a long-term study of the reliability will be conducted together with the first modelling of the reliability of the SiC CMOS amplifiers.
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