Foundation for Research and Technology Hellas (FORTH) – Institute of Electronic Structure and Laser (IESL) – Microelectronics Research Group (MRG)
The Foundation for Research and Technology - Hellas (FORTH) was founded in 1983. It is one of the largest research centers in Greece with well-organized facilities, highly qualified personnel and a reputation as a top-level research institution worldwide. FORTH comprises 8 Research Institutes. It participates to IREL 4.0 with its Microelectronics Research Group (MRG) of its Institute of Electronic Structure and Laser (IESL).
The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (IESL-FORTH) was founded in 1983. It has since established its international presence in the areas of Laser Science, Micro/nano-electronics, Polymer Science, Materials Science and Astrophysics. Nowadays, IESL occupies a distinct position in the international scientific map in several of these fields. The Microelectronics Research Group (MRG), established in 1986, currently conducts research in the fields of Semiconductor heterostructures & nanostructures, Nanopohotonics, Quantum Technologies, High frequency electronics & smart systems, Carbon & 2D electronics, and Technologies for energy and power.
Its mission is the development of innovative nanostructure materials and fabrication processes leading to new scientific knowledge and know-how on semiconductor material, device and system technologies. Its research addresses the key enabling technologies (KETs) of nanoelectronics, nanotechnology, photonics and advanced materials, the domains of information & communication technologies (ICT), quantum technologies and space, as well as the societal challenges of energy, safety, security, transport and health & wellbeing.
Based on its 25-year expertise in III-N based materials, optoelectronic devices, sensors and MMICs, the role of MRG in IREL 4.0 is to:
- Develop GaN based X-band MMICs on Si & SiC substrates.
- Co-develop with TRT a hybrid integration platform for GaN MMICs & RF MEMS.
- Develop coplanar GaN based MMICs to co-establish a monolithic integration protocol of MMICs and RF MEMS.
- Structural, DC & RF data sets for reliability analysis.
Use case transport – 6: Airport weather demonstrator
Address performance issues for MMICs (e.g. High temperature reverse bias, RF life time) and RF MEMS (in collaboration with TRT) like life cycles and charging effects and contribute towards their intelligent reliability.